项目: 1. 国家自然科学基金面上项目“新型二维类CuMP2X6结构多铁材料的磁电耦合效应与界面调控”，主持。 2. 国家自然科学基金面上项目“二维材料中谷与自旋自由度的耦合效应及其电磁调控”，主持。 3. 国家自然科学基金青年项目“弹性应变下原子薄膜的电子结构和输运性质的理论和计算研究”，主持。 论文: 1. Jin Zou, Wuxuan Li, Yechen Xun, Hua Wang, and Jingshan Qi, Tunable toroidic phase transition in one-dimensional antiferromagnetic ferrotoroidic semiconductor, Physical Review B 111(13), 134416 (2025). 2. Lijing Gao, Xiaofang Chen, and Jingshan Qi, Strain engineering of ferroelectric polarization and domain in the two-dimensional multiferroic semiconductor, Applied Physics Letters 125 (21), 212903 (2024). 3. Xiaoxiao Sun, Xiaofang Chen, and Jingshan Qi, Tunable trimeric charge density wave phase with multiferroicity in the two-dimensional transition metal dichalcogenides, Physical Review B 110(15), 155438 (2024). 4. Zhihao Gong, Yechen Xun, Zhuang Qian, Kai Chang, Jingshan Qi, and Hua Wang, One-dimensional multiferroic semiconductor WOI3: Unconventional anisotropic d1 rule and bulk photovoltaic effect, Physical Review B 110(9), 094408 (2024). 5. Zhigang Song, Jingshan Qi, Olivia Liebman, and Prineha Narang, Collective spin in twisted bilayer materials, Physical Review B, 110(2), 024401 (2024). 6. Li Feng, Xiaofang Chen and Jingshan Qi, Nonvolatile electric field control of spin-valley-layer polarized anomalous Hall effect in a two-dimensional multiferroic semiconductor bilayer, Physical Review B, 108(11), 115407(2023). 7. Wen Dang, Mengyu Zhu, Ziye Zhu, Xiaofang Chen, Zhigang Song, Jingshan Qi, Electric-Field-Tunable Spin Polarization and Carrier-Transport Anisotropy in an A-Type Antiferromagnetic van der Waals Bilayer，Physical Review Applied 18(6), 064086(2022). 8. Xunkai Duan, Hua Wang, Xiaofang Chen and Jingshan Qi, Multiple polarization phases and strong magnetoelectric coupling in the layered transition metal phosphorus chalcogenides TMP2X6 (T=Cu, Ag; M=Cr, V; X=S, Se) by controlling the interlayer interaction and dimension, Physical Review B, 106(11), 115403(2022). 9. Dier Feng, Ziye Zhu, Xiaofang Chen and Jingshan Qi, Electric-polarization-driven magnetic phase transition in a ferroelectric–ferromagnetic heterostructure, Applied Physics Letters 118 (6), 062903 (2021). 10. Yechen Xun, Ziye Zhu, Xiaofang Chen and Jingshan Qi, One-dimensional ferromagnetic semiconductor CrSbSe3 with high Curie temperature and large magnetic anisotropy, Physical Review B, 104(8), 085429(2021). 11. Ziye Zhu, Baiyu Zhang, Xiaofang Chen, Xiaofeng Qian and Jingshan Qi, Electric Field Control of Molecular Magnetic State by Two Dimensional Ferroelectric Heterostructure Engineering, Applied Physics Letters 117 (8), 08290 (2020). 12. Hua Wang, Jingshan Qi, and Xiaofeng Qian. Electrically-Tunable High Curie Temperature Two-Dimensional Ferromagnetism in Van der Waals Layered Crystals, Applied Physics Letters 117(8), 083102 (2020). 13. Ziye Zhu, Xiaofang Chen, Wenbin Li and Jingshan Qi, Electric field control of the semiconductor-metaltransition in two dimensional CuInP2S6/germanene van der Waals heterostructure, Applied Physics Letters 114(22), 223102 (2019). 14. Jingshan Qi, Kaige Hu and Xiao Li, Electric Control of the Edge Magnetization in Zigzag Stanene Nanoribbons from First Principles, Physical Review Applied 10 (3), 034048 (2018). 15. Jingshan Qi, Hua Wang, Xiaofang Chen, and Xiaofeng Qian. Two-dimensional multiferroic semiconductors with coexisting ferroelectricity and ferromagnetism. Applied Physics Letters 113(4), 043102 (2018). 16. Jingshan Qi, Xiao Li, Xiaofeng Qian, Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane, Applied Physics Letters 108(25), 253107 (2016). 17. Jingshan Qi, Xiao Li, Qian Niu and Ji Feng, Giant and tunable valley degeneracy splitting in MoTe2, Physical Review B, 92(12), 121403(2015). 18. Jingshan Qi, Xiao Li, Xiaofeng Qian,and Ji Feng, Bandgap engineering of rippled MoS2 monolayer under external electric field, Applied Physics Letters, 102(17), 173112 (2013). 19. Jingshan Qi, Xiaofeng Qian, Liang Qi, Ji Feng, Daning Shi and Ju Li, Strain-Engineering of Band Gaps in Piezoelectric Boron Nitride Nanoribbons, Nano Letters, 12(3), 1224-1228 (2012). 20. Jingshan Qi, Jianyu Huang, Ji Feng, Daning Shi and Ju Li, The Possibility of Chemically Inert, Graphene-Based All-carbon Electronic Devices with 0.8 eV Gap, ACS Nano, 5(5), 3475-3482 (2011). 学术服务： 担任Nature Communications, Physical Review Letters, Physical Review B, Physical Review Materials, Physical Review Applied, Applied Physics Letters, Journal of the American Chemical Society, ACS Nano, Journal of Physical Chemistry Letters等期刊审稿人.。 获奖： 1. 2016年江苏省高校自然科学奖 三等奖: 低维结构材料的力电磁多场耦合性质的研究（1/4）。 2. 指导的硕士论文“二维铁电和多铁范德华异质结构的设计与性能调控”获2021年江苏省优秀学术学位硕士学位论文。 |
